vs-30pt100 www.vishay.com vishay semiconductors revision: 10-aug-11 1 document number: 94532 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high performance generation 5.0 schottky rectifier, 30 a features ? 175 c high perfo rmance schottky diode ? very low forward voltage drop ? extremely low reverse leakage ? optimized v f vs. i r trade off for high efficiency ? increased ruggedness for reverse avalanche capability ? rbsoa available ? negligible switching losses ? submicron trench technology ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 applications ? high efficiency smps ? automotive ? high frequency switching ? output rectification ? reverse battery protection ? freewheeling ? dc/dc systems ? increased power density systems product summary package to-247ac modified i f(av) 30 a v r 100 v v f at i f 0.64 v i rm max. 15 ma at 125 c t j max. 175 c diode variation single die e as 135 mj ba s e cathode 2 13 anode cathode to-247ac modi?ed major ratings and characteristics symbol characteristics values units v rrm 100 v v f 30 apk, t j = 125 c (typical) 0.61 t j range - 55 to 175 c voltage ratings parameter symbol test conditions vs-30pt100 units maximum dc reverse voltage v r t j = 25 c 100 v absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) 50 % duty cycle at t c = 156 c, rectangular waveform 30 a maximum peak one cycle non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 2200 10 ms sine or 6 ms rect. pulse 450 non-repetitive avalanche energy e as t j = 25 c, i as = 3 a, l = 30 mh 135 mj repetitive avalanche current i ar limited by frequency of operation and time pulse duration so that t j < t j max. i as at t j max. as a functi on of time pulse see fig. 8 i as at t j max. a
vs-30pt100 www.vishay.com vishay semiconductors revision: 10-aug-11 2 document number: 94532 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions typ. max. units forward voltage drop v fm (1) 30 a t j = 25 c -0.77 v 60 a -0.9 30 a t j = 125 c -0.64 60 a -0.76 reverse leakage current i rm (1) t j = 25 c v r = rated v r - 200 a t j = 125 c - 15 ma junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz) 25 c 1650 - pf series inductance l s measured lead to lead 5 mm from package body 7.5 - nh maximum voltage rate of change dv/dt rated v r - 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 55 to 175 c maximum thermal resistance, junction to case r thjc dc operation 0.8 c/w typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.25 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to -247ac modified (jedec) 30pt100
vs-30pt100 www.vishay.com vishay semiconductors revision: 10-aug-11 3 document number: 94532 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics forward voltage drop - v fm (v) instantaneous forward current - i f (a) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000 tj = 25c tj = 125c tj = 175c reverse current - i r (ma) reverse voltage - v r (v) 0 20406080100 0.001 0.01 0.1 1 10 100 75c 100c 50c 125c 150c 175c 25c reverse voltage - v r (v) junction capacitance - c t (pf) 0 20 40 60 80 100 100 1000 10000 t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.001 0.01 0.1 1 10 single pulse (thermal resistance) d = 0.2 d = 0.25 d = 0.33 d = 0.5 d = 0.75
vs-30pt100 www.vishay.com vishay semiconductors revision: 10-aug-11 4 document number: 94532 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non-re petitive surge current note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r average forward current - i f (av) (a) allowable case temperature (c) 0 5 10 15 20 25 30 35 40 45 145 150 155 160 165 170 175 180 dc square wave (d=0.50) 80% rated vr applied see note (1) average forward current - i f (av) (a) average power loss - (watts) 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 180 120 90 60 30 dc rms limit square wave pulse duration - t p (microsec) non-repetitive surge current - i fsm (a) 10 100 1000 10000 100 1000 10000
vs-30pt100 www.vishay.com vishay semiconductors revision: 10-aug-11 5 document number: 94532 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 8 - reverse bias safe operating area (a valanche current vs. rectangular pulse duration) fig. 9 - reverse bias safe operating area (avalanche energy vs. rectangular pulse duration) 0 0 1 0 1 1 1 10 100 1000 tj = 25c tj = 125c tj = 175c rectangular pulse duration ( sec) avalanche current (a) 0 0 1 0 1 1 1 10 100 1000 tj = 25c tj = 125c tj = 175c rectangular pulse duration ( sec) avalanche energy (mj)
vs-30pt100 www.vishay.com vishay semiconductors revision: 10-aug-11 6 document number: 94532 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table 2 - current rating (30 a) 3 - package: p = to-247 (modified) 4 - t = trench 5 - voltage code (100 v) tube standard pack quantity: 25 pieces device code 2 4 3 5 30 p t 100 vs- 1 1 - vishay semiconductors product links to related documents dimensions www.vishay.com/doc?95253 part marking information www.vishay.com/doc?95255 spice model www.vishay.com/doc?95232
outline dimensions www.vishay.com vishay semiconductors revision: 21-jun-11 1 document number: 95253 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera nce per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c a (6) p (datum b) p1 d1 (4) 4 e1 view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode 0.10 a c m m ? k b d m m
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